A model for the CW-behaviour of the GaAs/GaAlAs-MCRW-DFB laser
Abstract
A model of the GaAs/GaAlAs-MCRW-DFB laser is presented which allows the estimation of threshold current density, differential quantum efficiency and temperature dependence of the emission wavelength. A laser structure with one cleaved facet and one non-reflecting laser-termination is expected to provide sufficient mode selectivity and a threshold current density of 2.2 kA/sq cm.
- Publication:
-
Archiv Elektronik und Uebertragungstechnik
- Pub Date:
- February 1986
- Bibcode:
- 1986ArElU..40...10B
- Keywords:
-
- Distributed Feedback Lasers;
- Gallium Arsenide Lasers;
- Quantum Efficiency;
- Semiconductor Lasers;
- Threshold Currents;
- Waveguide Lasers;
- Aluminum Gallium Arsenides;
- Bragg Angle;
- Current Density;
- Eigenvalues;
- Temperature Dependence;
- Wave Equations;
- Lasers and Masers