Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate
Abstract
The lateral photoeffect in a new type of amorphous superlattice film, consisting of 6 Å of Ti and 13 Å of Si grown on a Si substrate, is discussed. The photovoltage varies extremely linearly with light spot position and can thus be used in accurate position sensitive detectors.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 1986
- DOI:
- Bibcode:
- 1986ApPhL..49.1537L
- Keywords:
-
- Amorphous Semiconductors;
- Photoelectric Effect;
- Silicon Films;
- Superlattices;
- Thin Films;
- Titanium;
- Amorphous Silicon;
- Metal Films;
- Photovoltages;
- Solid-State Physics