Cross-sectional transmission electron microscope observation of step-band formation on GexSi1 - x(111) vicinal surfaces
Abstract
The Ge0.1Si0.9 surface and the Ge0.1Si0.9/Si interface on the Si(111) 4° off substrate were observed by a cross-sectional transmission electron microscope. The Ge0.1Si0.9 surface grown at 750 °C was composed of alternate planes of (111) terraces and step bands, whose widths in the <112> direction were about 450 and 150 Å, respectively. A step band was formed by steps several monolayers high. On the other hand, the Ge0.1Si0.9/Si interface was very flat and the step bands were not formed in the Si on Si homoepitaxy process at 750 °C.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 1986
- DOI:
- 10.1063/1.97544
- Bibcode:
- 1986ApPhL..49..776T
- Keywords:
-
- Band Structure Of Solids;
- Crystal Growth;
- Electron Microscopy;
- Superlattices;
- Germanium Compounds;
- Molecular Beam Epitaxy;
- Silicon Compounds;
- Solid-State Physics