Diffusion dynamics of holes in InxGa1 - xAs/GaAs strained-layer superlattices
Abstract
We investigate the diffusion dynamics of minority-carrier holes in In0.2Ga0.8As/GaAs strained-layer superlattices by measuring their diffusion lengths, both parallel and perpendicular to the layers, and recombination lifetime for temperatures between 78 and 300 K. From these data we determine a phenomenological hopping time for interlayer motion. We also estimate the valence-band barrier heights which govern this motion, by studying the interband quantum well optical transition energies over the same temperature range.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 1986
- DOI:
- 10.1063/1.97398
- Bibcode:
- 1986ApPhL..49..100G
- Keywords:
-
- Carrier Lifetime;
- Diffusion Length;
- Gallium Arsenides;
- Heterojunction Devices;
- Holes (Electron Deficiencies);
- Superlattices;
- Barrier Layers;
- Indium Arsenides;
- Minority Carriers;
- Optical Transition;
- Photodiodes;
- Quantum Wells;
- Recombination Reactions;
- Temperature Dependence;
- Valence;
- Solid-State Physics