Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing
Abstract
Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 1986
- DOI:
- 10.1063/1.96620
- Bibcode:
- 1986ApPhL..48.1012G
- Keywords:
-
- Doped Crystals;
- Molecular Beam Epitaxy;
- Silicon Films;
- Thin Films;
- Vapor Deposition;
- Electrical Properties;
- Heat Treatment;
- Single Crystals;
- Surface Reactions;
- Solid-State Physics