AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
Abstract
We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two-dimensional electron and hole gases, have been obtained for the first time.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 1986
- DOI:
- 10.1063/1.96753
- Bibcode:
- 1986ApPhL..48...36V
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electrical Properties;
- Electron Mobility;
- Heterojunctions;
- Molecular Beam Epitaxy;
- Optical Properties;
- Czochralski Method;
- Gallium Arsenides;
- Photoluminescence;
- Solid-State Physics