A large-signal narrow-band quasi-black-box model for microwave transistors

A method for the large-signal narrow-band modeling of microwave transistors is proposed. It is based on a quasi-black-box approach which does not imply a detailed knowledge of the internal structure of the device and allows for large-signal performance prediction using a very simple analysis procedure. The model characterization requires only measurements of small-signal S parameters under different bias conditions and some other large-signal measurements which can be carried out by means of standard network analysis equipment. The validity of the proposed method both for bipolar and for field effect transistors has been confirmed by the good agreement between predicted and measured performance.