Gallium arsenide: Materials, devices, and circuits
Abstract
The lattice, optical, and electrical properties of GaAs are discussed. The techniques for bulk ingot and epitaxial growth of GaAs materials are described. The etching of GaAs, ion implantation and damage in GaAs, ohmic and Schottky contacts, and metal-insulator-GaAs structures for GaAs devices and circuits are examined. The development of discrete, transferred electron, and optoelectronic devices is studied. Data on the fabrication and performance of GaAs monolithic microwave and digital integrated circuits are analyzed.
- Publication:
-
Chichester
- Pub Date:
- 1985
- Bibcode:
- 1985wi...bookR....H
- Keywords:
-
- Gallium Arsenides;
- Semiconductor Devices;
- Avalanche Diodes;
- Digital Systems;
- Electro-Optics;
- Epitaxy;
- Etching;
- Fabrication;
- Field Effect Transistors;
- Gallium Arsenide Lasers;
- Integrated Circuits;
- Ion Implantation;
- Light Emitting Diodes;
- Metallizing;
- Microwave Circuits;
- Optoelectronic Devices;
- Photonics;
- Radiation Damage;
- Surface Finishing;
- Transferred Electron Devices;
- Electronics and Electrical Engineering