Interface chemistry of ternary semiconductors: Local morphology of the Hg(1-x)CdxTe-Cr interface

Synchrotron Radiation Photoemission studies of interfaces prepared in situ on cleaved substrates show atomic interdiffusion with Cr/Hg and Cr/Cd exchange reactions taking place at room temperature for Cr coverages less than 2A. Correspondingly, dissociated Te is released at the surface. A subsurface region 10-13 A thick is formed in which Cr atoms replace all of the Hg atoms and at least 20% of the Cd atoms. Below this subsurface the semiconductor maintains the bulk stoichiometry and the initial surface band bending.