Relationship between electrical and structural properties of a-SiGe:H films
Abstract
a-SiGe:H films produced by the triode type RF glow discharge system have high photoconductivity, sharp Urbach tail and low dangling bond density as compared with those produced by the conventional diode type RF glow discharge system. Structural analysis was performed in relation to the electrical properties of a-SiGe:H films. From the results obtained by FT-IR, ESR, PDS, hydrogen evolution experiment and TEM images, better qualities of triode films were attributed to their homogeneous structures. In contrast with this, inhomogeneous microstructures were observed in diode films with poor photoelectrical properties.
- Publication:
-
IN: Photovoltaic Specialists Conference
- Pub Date:
- 1985
- Bibcode:
- 1985pvsp.conf.1495I
- Keywords:
-
- Amorphous Semiconductors;
- Energy Conversion Efficiency;
- Glow Discharges;
- Silicon Films;
- Solar Cells;
- Germanium Alloys;
- Photoconductivity;
- Power Converters;
- Triodes;
- Electronics and Electrical Engineering