500 V BiMOS technology and its applications

Five-hundred V junction-isolated BiMOS high voltage IC process technology provides the circuit designer with a myriad of low and high voltage devices. However, to exploit the full capability of this process and atpply it efficiently, it is crucial to understand and model the devices it makes available. This paper describes specifically the high voltage NPN structure, its resulting equivalent model, and shows actual device data. HSPICE device models that accurately predict the behavior of low voltage components (which may be referenced at high voltages) as a function of temperature have been developed and will be presented. Generic application examples that convey the flexibility and power of this process will be provided.