Fault models
Abstract
A major problem in the qualification of integrated circuit cells and in the development of adequate tests for the circuits is to lack of information on the nature and density of fault models. Some of this information is being obtained from the test structures. In particular, the Pinhole Array Capacitor is providing values for the resistance of gate oxide shorts, and the Addressable Inverter Matrix is providing values for parameter distributions such as noise margins. Another CMOS fault mode, that of the open-gated transistor, is examined and the state of the transistors assessed. Preliminary results are described for a number of open-gated structures such as transistors, inverters, and NAND gates. Resistor faults are applied to various CMOS gates and the time responses are noted. The critical value for the resistive short to upset the gate response was determined.
- Publication:
-
In its Product Assurance Technology for Custom LSI/VLSI Electronics p 6 p (SEE N86-29255 20-38
- Pub Date:
- June 1985
- Bibcode:
- 1985patc.nasa....6S
- Keywords:
-
- Capacitors;
- Cmos;
- Electrical Faults;
- Failure Modes;
- Integrated Circuits;
- Pinholes;
- Circuit Diagrams;
- Gates (Circuits);
- Tables (Data);
- Electronics and Electrical Engineering