Studies on amorphizing silicon using silicon ion implantation
Abstract
Studies of various conditions to create amorphous Si regions suitable for recrystallization of 0.3 micron and 0.5 micron Si films were made on the Varian 400-10AR Ion Implanter in the Avionics Laboratory and on the General Ionex Corporation 1.7 MeV Tandetron accelerator at Universal Energy Systems. Experimentally, cooling the sample substrate was found to be very important to achieving amorphous regions in the sample. Toward the end of this effort, Dow Corning heat sink compound RTV 340 was found to be a superior mounting medium to rubber cement.
- Publication:
-
Interim Report
- Pub Date:
- April 1985
- Bibcode:
- 1985pafb.rept.....F
- Keywords:
-
- Amorphous Materials;
- Ion Implantation;
- Recrystallization;
- Silicon;
- Thin Films;
- Avionics;
- Backscattering;
- Cements;
- Cooling;
- Regions;
- Rubber;
- Substrates;
- Solid-State Physics