A Schottky diode and method of fabrication

A Schottky diode and method of making same in which a n+ doped layer, an n doped layer and an undoped layer of a semi-insulating material selected from the group consisting of gallium arsenide, aluminum gallium arsenide and indium phosphide is grown consecutively on a semi-insulating substrate made of the same material. A mesa with acute angled sides is etched on the undoped layer to such a depth that the n doped layer is exposed. A Schottky an ohmic contact are then deposited on opposite sides of the mesa. The exposed n layer is then bombarded with protons at normal incidence.