A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
Abstract
This abstract discloses a low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP Semiconductor devices.
- Publication:
-
Patent Application Department of the Navy
- Pub Date:
- June 1985
- Bibcode:
- 1985padn.reptR....B
- Keywords:
-
- Barrier Layers;
- Diffusion;
- Electric Contacts;
- P-Type Semiconductors;
- Gold;
- Indium;
- Patent Applications;
- Titanium;
- Tungsten;
- Zinc;
- Electronics and Electrical Engineering