Heat pipe and method of making same
Abstract
The present invention relates generally to semiconductor crystal growth, and, in particular, relates to a device used in an apparatus for crystal growth. The instant invention sets forth a heat pipe for crystal growth that is able to operate at high pressure/temperature. A cylindrical heat pipe for use in a crystal growth furnace has walls of tungsten with a layer of titanium deposited thereover to prevent oxidation. Strengthening members are placed between the walls to provide added strength. A wick structure of tungsten is used in the annular chamber to carry a working fluid of lithium.
- Publication:
-
Patent Application Department of the Air Force
- Pub Date:
- February 1985
- Bibcode:
- 1985pad..reptW....A
- Keywords:
-
- Coatings;
- Crystal Growth;
- Deposition;
- Heat Pipes;
- Semiconductors (Materials);
- High Pressure;
- High Temperature;
- Oxidation;
- Patent Applications;
- Tungsten Compounds;
- Fluid Mechanics and Heat Transfer