Millimeter-wave integrated-circuit transducers

Design techniques, trade-offs, and hardware examples of ICs for millimeter wave applications are surveyed. The design goals are configurations which permit a low unit cost and mass production. Either hybrid and/or monolithic approaches can be used to obtain a planar IC with a minimal interface or dependence of waveguide assemblies. If a mix of the hybrid and monolithic features is employed, the transmit/receiver modules can be placed on the antenna focal plane and used in both strap-down and scanning transducer applications. GaAs materials, which permit manufacture of MESFETs with submicron gate lengths amenable to RF wavelengths beyond the Ka band, are not yet available in sufficient abundance for reducing the unit costs. Further development is also needed for Gunn and IMPATT diodes for higher power transceivers, ferrite components compatible with a planar IC format, and multiple-beam, thin, planar antennas which can be fabricated using a low cost photolithographic process. Electronically scanned array antennas of various sizes, which feature planar radiating elements, would also find ready applications. Finally, automated assembly lines are required to reduce labor costs to make the ICs affordable.