Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications
Abstract
Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.
- Publication:
-
AUTOTESTCON 1985; Proceedings of the International Automatic Testing Conference
- Pub Date:
- May 1985
- Bibcode:
- 1985ieee.proc..111M
- Keywords:
-
- Fabrication;
- Millimeter Waves;
- Performance Tests;
- Schottky Diodes;
- Submillimeter Waves;
- Whiskers (Crystals);
- Capacitance;
- Epitaxy;
- Frequency Response;
- Radio Astronomy;
- Electronics and Electrical Engineering