Method of making self-aligned IGFET
Abstract
The IGFET is formed on a GaAs wafer which is coated with a layer of Si3N4 and a SiO2 layer. The SiO2 is etched away in transistor areas, and ion implanting provides channel doping. A gate of refractory metal such as Mo is deposited and delineated. The gate and the SiO2 act as masks for ion implantation of the source and drain. The refractory metal gate allows subsequent annealing at high temperatures to active the ion implanted species.
- Publication:
-
Air Force Interim Report
- Pub Date:
- August 1985
- Bibcode:
- 1985aifo.reptQR...S
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Refractory Metals;
- Wafers;
- Annealing;
- Molybdenum;
- Patents;
- Selenium;
- Self Alignment;
- Silicon Dioxide;
- Silicon Nitrides;
- Transistors;
- Electronics and Electrical Engineering