Polarization-dependent ballistic photovoltaic effect in a metal-semiconductor structure
Abstract
The polarization characteristics of photovoltaic effects in Al-(n-GaAs)-(n/+/-GaAs) semiconductors have been investigated theoretically. The normal components of the photocurrent, including both types of photo-emf, described by a phenomenological expression for a cubic crystal, and the ballistic Dember voltage of the photovoltaic effect was estimated. The spectra of photo-emf for a sample of Al-(n-GaAs)-(n/+/-GaAs) crystal in the (110) orientation were obtained, and the results are used to confirm theoretical predictions of the polarization dependence associated with anisotropic wave functions and the dispersion laws of the valence band of the crystal.
- Publication:
-
ZhETF Pisma Redaktsiiu
- Pub Date:
- May 1985
- Bibcode:
- 1985ZhPmR..41..413A
- Keywords:
-
- Gallium Arsenides;
- Interfaces;
- Mis (Semiconductors);
- Photovoltaic Effect;
- Polarization Characteristics;
- Semiconductors (Materials);
- Aluminum Gallium Arsenides;
- Band Structure Of Solids;
- Emission Spectra;
- Solid-State Physics