Defects at semiconductor surfaces
Abstract
Low Energy Electron Diffraction (LEED) is widely used for detection of periodicity at the surface and of atom arrangement within the unit cell. Experiments and results, however, are increasing, which use the spot profile analysis (SPA-LEED) for the study of nonperiodic surfaces. Here the kinematical approximation provides a wider range of validity than expected. For semiconductors defects are especially important, since the surface states in the gap are determined or strongly influenced by almost any kind of defects at the surface. Atomic steps at the interface {Si}/{SiO2} have been shown to be correlated with many electronic properties of MOS devices like mobility, interface states and fixed charge. The epitaxy on Si and GaAs has been studied with LEED and RHEED, showing the density of the nuclei during formation of a layer and the layer-by-layer growth. The formation of metal suicides in the monolayer range is accompanied by many different superstructures and other rearrangements. It is demonstrated, that the new high resolution instruments provide additional qualitative and quantitative informations on any kind of surface defects.
- Publication:
-
Surface Science
- Pub Date:
- April 1985
- DOI:
- 10.1016/0039-6028(85)90511-4
- Bibcode:
- 1985SurSc.152..963H