An ambipolar amorphous-silicon field-effect transistor

The characteristics of an amorphous silicon (a-Si) thin-film transistor structure functioning as an ambipolar FET are described. Theoretical and experimental results are compared for typical input conductances and output characteristics. The transition behavior between the electron and hole regimes, which is given by the off-state valley, is considered. The movement of the transition point, or domain boundary, across the transition regime is described.