Modeling on-resistance for silicon photoconductive switching devices

Analytical models have been developed in order to characterize the on-resistance of silicon photoconductive switching devices as a function of the optical energy absorbed. It has been shown that by using a more exact mobility model which accounts for physical effects on the carrier mobility, significant changes in conductance are found for the same device structure. The effects accounted for in this more exact model are electric field degradation, carrier-carrier interactions, and temperature effects. Further work in this area should concentrate on obtaining experimental data to verify these results, along with the development of more exact numerical models to account for two-dimensional drift and diffusion effects on device performance.