Damage due to hot-carrier and radiation effects in MOS transistors
Abstract
The relative types and magnitudes of damage produced by ionizing radiation and hot carriers for a current CMOS technology are discussed and these effects are related to each other.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- August 1985
- Bibcode:
- 1985STIN...8622862M
- Keywords:
-
- Damage;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Interfaces;
- Ionization;
- Transistors;
- Electronics and Electrical Engineering