Chemical bonding, interdiffusion and electronic structure at InP, GaAs, and Si-metal interfaces

An experimental program investigates the interface electronic states and band structure at Germanium Arsenides, Indium Phosphides and Silicon-metal interfaces formed by chemical reaction and interdiffusion at room temperature, elevated temperatures, as well as following pulsed-laser annealing; uses soft X-ray photoemission spectroscopy (SXPS) and Auger electron spectroscopy (AES)/depth profiling to characterize atomic redistribution and new chemical bonding near the surfaces and interfaces on an atomic scale; refines the technique of cathodoluminescence spectroscopy (CLS) for investigations of new compound and defect formation at buried metal-semiconductor interfaces; and employs temperature-dependent current-voltage and capacitance-voltage measurements to characterize the electronic properties and spatial distribution of interface states of metal-InP interfaces prepared and processed under carefully controlled conditions. The work can be grouped into four areas: (1) chemical and electronic structure of buried III-V and II-VI compound semiconductor-metal interfaces, (2) localized chemical reactions at Aluminum interfaces with III-V compound semiconductors promoted by pulsed-laser annealing as well as laser-induced oxidation of Si, (3) eletrical characterization of the UHV-prepared Al-InP (110) interface, and (4) control of competitive Ti-Si and Ti-SiO2 interfacial reactions by rapid thermal annealing.