Bridgman growth of semiconductors

The purpose of this study was to improve the understanding of the transport phenomena which occurs in the directional solidification of alloy semiconductors. In particular, emphasis was placed on the strong role of convection in the melt. Analytical solutions were not deemed possible for such an involved problem. Accordingly, a numerical model of the process was developed which simulated the transport. This translates into solving the partial differential equations of energy, mass, species, and momentum transfer subject to various boundary and initial conditions. A finite element method with simple elements was initially chosen. This simulation tool will enable the crystal grower to systematically identify and modify the important design factors within her control to produce better crystals.