Materials and process development for microcomputer-compatible pressure, temperature, and position sensors

Polysilicon pressure sensor temperature compensated within 3%/100 K with N = 10 to the 20th power/CC was made. By integrating a network of suitable polysilicon resistors on top of the chip of a standard silicon pressure sensor, an interchangeable pressure sensor is obtained. By laser trimming the offset voltage can be compensated and the temperature errors related to the signal can be reduced to better than 5 o/oo/100 K for the offset and better than 2%/100 K for the sensitivity.