A comparison of the radiation hardness of various VLSI technologies for defense applications
Abstract
The radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. The IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness, while reducing lateral feature sizes may increase susceptibility to transient radiation effects. It is concluded that during the next decade, silicon complimentary MOS (CMOS), perhaps on an insulating substrate (SOI) will be the technology of choice for VLSI in defense systems.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- 1985
- Bibcode:
- 1985STIN...8530236G
- Keywords:
-
- Cosmic Rays;
- Integrated Circuits;
- Radiation Hardening;
- Very Large Scale Integration;
- Comparison;
- Neutrons;
- Technology Utilization;
- Electronics and Electrical Engineering