Development of photodetectors
Abstract
Vapor-phase-epitaxial techniques have been used to fabricate InGaAs/InP avalanche photodiodes having a SAM configuration. The APD's are mesa-etched and are unpassivated. Stable operation up to gains of about 10 has been demonstrated. Noise of all units tested has been somewhat high due to a high value of Kerr (about 0.6), and due to high bulk dark currents. Attempts to develop a satisfactory passivation for the mess-etched devices have been largely unsuccessful.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- January 1985
- Bibcode:
- 1985STIN...8529158M
- Keywords:
-
- Avalanche Diodes;
- Electric Current;
- Gallium Arsenides;
- Indium Compounds;
- Indium Phosphides;
- Photodiodes;
- Vapor Phase Epitaxy;
- Electromagnetic Noise;
- Fabrication;
- Silicon Junctions;
- Stability;
- Electronics and Electrical Engineering