Excess base noise in the bipolar junction transistor
Abstract
It has been known for some time that the bipolar transistor base region exhibits a noise in excess of that predicted by thermal noise associated with the base spreading resistance measured by large- or small-signal methods. This paper presents a relatively simple mechanism and model involving a transconductance gradient that accounts for the excess noise.
- Publication:
-
Solid State Electronics
- Pub Date:
- September 1985
- DOI:
- 10.1016/0038-1101(85)90078-4
- Bibcode:
- 1985SSEle..28..875R
- Keywords:
-
- Bipolar Transistors;
- Electrical Resistance;
- Junction Transistors;
- Thermal Noise;
- Capacitance;
- Carrier Injection;
- Nyquist Diagram;
- Electronics and Electrical Engineering