Theory of the input powerdependence of the electron heating in ninversion layers
Abstract
The average energy loss P of hot electrons due to the interaction with acoustic bulk phonons is calculated and used to determine the electron heating temperature ∆ as a function of the input power eμ E^{2}. It is found that P creases proportional to ∆ ^{2} and is independent of the carrier concentration. Consequently the ratio ∆/√ eμ E^{2} turns out to be a constant (0.75 × 10 ^{2} K/(eV/s) ^{{1}/{2}} for nSi and 2.04 × 10 ^{2} K/(eV/s) ^{{1}/{2}} for nGaAs) in agreement with the experimental data deduced from FIRemission experiments at T = 4.2 K.
 Publication:

Solid State Communications
 Pub Date:
 September 1985
 DOI:
 10.1016/00381098(85)908129
 Bibcode:
 1985SSCom..55..847V