Dependence of optical absorption of amorphous InSe films on temperature of heat treatment
Abstract
Amorphous In XSe 1- X thin films of thickness ⋍2700 Å are prepared by vacuum evaporation. The optical gaps Eoptg are determined from the absorption spectrum of the InSe films heat treated at different temperatures and for different periods of time. The increase in the values of Eoptg of a-InSe films with heat treatment is interpreted in terms of density of states model of Mott and Davis and explained as due to the saturation of bonds in the amorphous solid.
- Publication:
-
Solid State Communications
- Pub Date:
- January 1985
- DOI:
- 10.1016/0038-1098(85)90051-1
- Bibcode:
- 1985SSCom..53..273C
- Keywords:
-
- Amorphous Semiconductors;
- Electromagnetic Absorption;
- Heat Treatment;
- Indium Compounds;
- Selenides;
- Semiconducting Films;
- Absorption Spectra;
- Film Thickness;
- Light Transmission;
- Temperature Dependence;
- Thin Films;
- Solid-State Physics