Certain features of laser destruction and dislocational structure of silicon during heating and effects of electrical field

The effects of laser processing on silicon monocrystals, comparing properties before irradiation and after gamma-ray laser processing, polishing and annealing for 1.5 hours at 950 C in a vacuum oven are reported. The GOR-100 laser's intensity was varied by focus adjustments. A nearly circular dense zone was found at the site of laser treatment. The dislocational changes in structure were the only variations noted before the melting point, despite the brittleness of pure silicon. After melting, an electrical current transmitted through the silicon resulted in arc-like cracks. Most damage was to the surface. Structural distortions have a semispherical form with 1 to 2 mm diameter and 30-50 mcm depth. Temperature effects are noted in the dislocational structure of the silicon samples.