High-frequency characteristics of ballistic bipolar heterojunction transistors
Abstract
The HF characteristics of bipolar transistors based on semiconductor heterostructures are calculated and analyzed. It is suggested that, for n-p-n transistors, the motion of electrons in the base and collector junction is ballistic, while the high conductivity of the base assures its quasineutrality. Allowance is made for the nonquadratic character of the electron dispersion law, significant in the collector-junction region. Frequency dependences of the current gain coefficients are determined for a circuit with a common base and emitter, and boundary frequencies are determined.
- Publication:
-
USSR Rept Electron Elec Eng JPRS UEE
- Pub Date:
- April 1985
- Bibcode:
- 1985RpEEE.......69R
- Keywords:
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- Bipolar Transistors;
- Heterojunction Devices;
- High Frequencies;
- Ballistics;
- Electron Mobility;
- Frequency Response;
- N-P-N Junctions;
- Particle Motion;
- Power Gain;
- Electronics and Electrical Engineering