Computer-aided identification of complete constitution model of transistor structure for design of subnanosecond large-scale-integrated circuits

Conputer programs were developed for two dimensional modeling of transistor structures with planar contact configuration in order to facilitate the design of LSI circuits with minimization of geometrical dimensions and identification of static and dynamic electrical characteristics throughout the technological process. These programs, TRAN 2 and TRAN 2M, are concerned with a transistor not only in the normal active mode but also in inversion and saturation states. Another specific application is subnanosecond LSI of emitter coupled logic in the unsaturated state. Electron and hole concentrations as variable in the TRAN 2 program were replaced with the exponents of electron and hole Fermi quasi potentials, which symmetrizes with diagnol predominance the matrices of discretized continuity equations and thus facilitates the solution of the latter. Both programs yield all necessary current-voltage and capacitance-voltage characteristics as well as the dependence of the collector-emitter time constant and of the current transfer ratio on the collector voltage.