Integral stochastic avalanche equation and its application to the noise analysis of IMPATTs with a wide multiplication layer
Abstract
An avalanche equation is derived which describes noise generation in IMPATTs and makes it possible to account for carrier-transfer effects in the avalanche zone which are important for millimeter-wave devices. A solution procedure is developed which makes it possible to account for (along with the carrier-transfer effects) the diode doping profile, the avalanche nonlinearity, the saturation current, and different values of ionization coefficients and drift velocities for electrons and holes.
- Publication:
-
Radiofizika
- Pub Date:
- 1985
- Bibcode:
- 1985RaF....28.1462O
- Keywords:
-
- Avalanche Diodes;
- Integral Equations;
- Microwave Equipment;
- Noise Spectra;
- Stochastic Processes;
- Additives;
- Drift Rate;
- Energy Spectra;
- Hole Mobility;
- Nonlinear Systems;
- Electronics and Electrical Engineering