The 1/f bias-current noise in IMPATT diodes
Abstract
The 1/f bias-current noise in IMPATT diodes is connected with local fluctuations of the charge-carrier drift velocity on the basis of an empirical formula by Hooge et al. (1981) for mobility fluctuations. Experimental results for a GaAs IMPATT diode with Schottky barrier and homogeneous alloying profile are given. The results suggest that the properties of the primary 1/f bias-current noise source are weakly dependent on the field. In computing the noise current, the generation-recombination saturation noise is taken into account.
- Publication:
-
Radiofizika
- Pub Date:
- 1985
- Bibcode:
- 1985RaF....28..607K
- Keywords:
-
- Avalanche Diodes;
- Carrier Mobility;
- Carrier To Noise Ratios;
- Charge Carriers;
- Noise Propagation;
- Alloying;
- Bias;
- Drift Rate;
- Gallium Arsenides;
- Schottky Diodes;
- Electronics and Electrical Engineering