Volt-ampere characteristics of the inputs of silicon CCDs in the weak-strong inversion transition region

The volt-ampere characteristics of the inputs of silicon transistor CCD structures and their temperature dependences in the 77-300 K range were determined experimentally. Theoretical expressions are examined which are found to describe well these experimental data not only in the subthreshold region but also in the transition region to strong inversion. However, these expressions require that the thermal potential be replaced by its effective value, 1.3-1.7 times the true one. These results make it possible to analyze input devices at currents ranging from 10 to the -11th to 10 the -5th A.