Quasiperiodic GaAs-AlAs heterostructures
Abstract
We report the first realization of a quasiperiodic (incommensurate) superlattice. The sample, grown by molecular-beam epitaxy, consists of alternating layers of GaAs and AlAs to form a Fibonacci sequence in which the ratio of incommensurate periods is equal to the golden mean τ. X-ray and Raman scattering measurements are presented revealing some of the unique properties of these novel structures.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 1985
- DOI:
- 10.1103/PhysRevLett.55.1768
- Bibcode:
- 1985PhRvL..55.1768M
- Keywords:
-
- Aluminum Arsenides;
- Gallium Arsenides;
- Heterojunction Devices;
- Superlattices;
- Fibonacci Numbers;
- Molecular Beam Epitaxy;
- Schroedinger Equation;
- Solid-State Physics;
- 68.55.+b;
- 61.50.Em;
- 78.30.Gt;
- 78.70.Ck;
- X-ray scattering