Anisotropies in the above-bandgap optical spectra of cubic semiconductors
Abstract
We report the first systematic study of above-bandgap optical anisotropies in cubic semiconduc- tors. The anisotropies are large, of the order of 1%. The dominant intrinsic contributions for (110) Si and Ge are due to surface many-body screening and bulk spatial dispersion. Extrinsic contributions from chemisorbed and physisorbed species also play important roles.
- Publication:
-
Physical Review Letters
- Pub Date:
- April 1985
- DOI:
- 10.1103/PhysRevLett.54.1956
- Bibcode:
- 1985PhRvL..54.1956A
- Keywords:
-
- Band Structure Of Solids;
- Crystal Surfaces;
- Cubic Lattices;
- Energy Gaps (Solid State);
- Optical Properties;
- Semiconductors (Materials);
- Adsorption;
- Anisotropy;
- Germanium Oxides;
- Silicon Oxides;
- Spectral Reflectance;
- Solid-State Physics;
- 78.20.Dj;
- 73.20.Cw;
- 78.40.Fy;
- 81.40.Tv;
- Semiconductors;
- Optical and dielectric properties