Method for direct determination of the effective correlation energy of defects in semiconductors: Optical modulation spectroscopy of dangling bonds
Abstract
The optical modulation technique is used for direct determination of energy levels and the effective correlation energy Ueff of dangling-bond defects. With an accuracy of 0.1 eV we found for the dangling-bond defect in a-Si:H, Ueff=0.5 eV; in a-As2S3, Ueff=-1.0 eV; in As2Se3, Ueff=-0.7 eV; and in trans-(CH)x, Ueff=0.95 eV.
- Publication:
-
Physical Review Letters
- Pub Date:
- April 1985
- DOI:
- 10.1103/PhysRevLett.54.1844
- Bibcode:
- 1985PhRvL..54.1844V
- Keywords:
-
- 71.45.Gm;
- 71.55.Fr;
- 78.50.Ge;
- Exchange correlation dielectric and magnetic response functions plasmons