General theory of the transverse dielectric constant of IIIV semiconducting compounds
Abstract
We have developed a general model of the transverse dielectric constant of IIIV compounds using a hybrid method which combines the k.p method with a nonlocal pseudopotential calculation. In our method we partition the Brillouin zone into three regions by expanding the energy bands and matrix elements about the Γ, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, we are able to get good insight into the dependence of the dielectric constant on the shape of the band structure. Hence, it is seen that the X and L regions contribute 9095 % and the Γ region only 510 % to the zerofrequency dielectric constant. In general, our results for ɛ_{1}(0) and ɛ_{2}(ω) agree well with the experimental data.
 Publication:

Physical Review B
 Pub Date:
 October 1985
 DOI:
 10.1103/PhysRevB.32.5177
 Bibcode:
 1985PhRvB..32.5177K
 Keywords:

 Brillouin Zones;
 Dielectrics;
 Energy Bands;
 Semiconductors (Materials);
 Aluminum Arsenides;
 Aluminum Gallium Arsenides;
 Gallium Arsenides;
 Gallium Phosphides;
 Indium Arsenides;
 Indium Phosphides;
 Matrices (Mathematics);
 SolidState Physics;
 78.20.Bh;
 71.10.+x;
 78.20.Dj;
 71.25.Tn;
 Theory models and numerical simulation