The temperature behavior of barriercontrolled siliconpnpdiodes
Abstract
The temperature behavior of siliconpnpdiodes was investigated. The application of the driftdiffusion theory gives an exponential dependence of the diode current on the smallest potential barrier in the diode. The calculation of this potential barrier is limited to diodes which are already in thermal equilibrium far in the punchthrough. A model which takes into account the effect of an electron charge was developed to explain the high temperature sensitivity of the electrical characteristics measured on pnpstructures. The electron current balance equation deduced from the continuity equation shows a correlation between the potential barrier and the maximum electron concentration in the base. The hypotheses of the analytical model were checked with a numerical simulation of the diode. The experimental data show good agreement with theory.
 Publication:

Ph.D. Thesis
 Pub Date:
 1985
 Bibcode:
 1985PhDT........61S
 Keywords:

 Barrier Layers;
 Semiconductor Diodes;
 Silicon;
 Temperature Effects;
 Computerized Simulation;
 Continuity Equation;
 Electron Diffusion;
 Mathematical Models;
 VoltAmpere Characteristics;
 Electronics and Electrical Engineering