The effect of contacts on the counting characteristics of heavily doped n-type cadmium telluride

Cadmium telluride single crystals were grown heavily doped with chloride. The resulting crystals were n-type with free carrier concentrations of the order of 10 to the 12th power cu cm/v-sec and resistivities between .002 and .0002 ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.