Analysis of the electrical properties of a GaAs field effect transistor with a nonuniform doping profile
Abstract
A numerical model (SIMTEC) is presented for computer-aided design of the electrical characteristics of MESFETs with nonuniform ionic doping profiles. Account is taken of the geometrical dimensions of a MESFET design and the relationship of the dimensions to the electrical performance parameters. The model permits prediction of the static characteristics, the microwave performance of the components and the effects of a Debye length. SIMTEC can be used to model the performance of MESFETS with submicron gates, with emphasis on the impact of the gate recess depth, the power level and the densities of dopant atoms in the direction perpendicular to the surface of the device. Various MESFET designs can thereby be evaluated as a function of the dopant profiles. The model is recommended for use in the simulation of ICs with many transistors. The results of sample simulation of the performance of an amplifier stage under active loading are reported.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1985
- Bibcode:
- 1985PhDT........34C
- Keywords:
-
- Computerized Simulation;
- Doped Crystals;
- Electrical Properties;
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Carrier Transport (Solid State);
- Computer Aided Design;
- Debye Length;
- Electrostatics;
- Gates (Circuits);
- Integrated Circuits;
- Microelectronics;
- Microwave Circuits;
- Msm (Semiconductors);
- Schottky Diodes;
- Transistor Amplifiers;
- Electronics and Electrical Engineering