Study of nonlinearities and noise in submicron-dual-gate FETs. Microwave applications: Controlled-gain amplification Frequency multiplication
Abstract
The performance of GaAs submicron-dual-gate FETs operating at 2-18 GHz is investigated theoretically and experimentally. A theoretical model of FET operation, both for weak signals and for the weakly nonlinear regime, is developed; experimental measurements on AT 11200, NEC 463.00, and DCM 48 FETs are reported in tables and graphs and analyzed in detail; the formulation for the nonlinearities is verified experimentally; numerical simulations of the microwave noise output of FETs in controlled-gain amplifiers are presented; and the power-conversion possibilities offered by these FETs (including high-order-harmonic frequency multiplication and very-wide-band mixing) are discussed.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1985
- Bibcode:
- 1985PhDT........11R
- Keywords:
-
- Amplifier Design;
- Electromagnetic Noise;
- Field Effect Transistors;
- Frequency Multipliers;
- Microwave Circuits;
- Electrical Impedance;
- Equivalent Circuits;
- Mixing Circuits;
- Network Analysis;
- Noise Generators;
- Nonlinear Systems;
- Superhigh Frequencies;
- Electronics and Electrical Engineering