Sputtering of thin films by 100 keV Ar + ions
Abstract
The sputtering yield can be determined for thin films on a much thicker substrate by sputtering the film material completely. Optical emission intensities for spectral lines from the thin film and substrate elements can be measured as a function of the incident ion fluence. Thin Cu, Ni and Mn films of 17 μg/cm 2, 22 μg/cm 2 and 28 μg/cm 2 on thick Al substrates have been sputtered by 100 keV Ar + ions with current densities of less than 2 μA/cm 2. The Cu I, Ni I, Mn I and Al I optical lines were used to determine the sputtering yields.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- May 1985
- DOI:
- 10.1016/0168-583X(85)90097-7
- Bibcode:
- 1985NIMPB..10..743T