Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of 16O

The dependence of near-surface crystallinity on substrate heating during high dose O ⁺ implantation into Si and post-implantation annealing was studied. It is shown that the damage morphology in the crystalline region above the SiO ₂ layer is very sensitive to substrate temperature and that, under optimum implant conditions which minimize damage conditions in the near surface, annealing does not improve the near surface crystallinity. Rutherford backscattering/channeling spectroscopy and cross-sectional transmission electron microscopy were used to analyze the microstructure of the samples.