Interest in silicon or) insulator (SOI) technology has led to the development of several alternatives to silicon on sapphire. One of the most promising techniques makes use of an ion implanter to form a buried oxide layer directly in the silicon substrate. To have useful single crystalline silicon on top of the oxide layer, it is necessary to do the implant at high wafer temperatures and rely on solid phase epitaxy to maintain surface structure. A high current, 160 keV, Nova ion implanter has been adapted to provide the ability to perform oxygen implants at elevated temperatures. The operator is free to choose any temperature in the range between 400°C and 600°C. The system then preheats the wafers to the selected temperature before the implant begins. A novel technique for providing both heating and cooling capability to the end station is employed. An infrared signal from the wafers is monitored by a room temperature lead salt detector. This signal is then used by a servo-loop to control the heating of the end station and to maintain the wafer temperature to within ± 20°C during the implant. High doses of the type necessary to form a silicon dioxide buried layer require long lived, high current oxygen sources. An oxygen source has been specially developed, which provides as much as 10 mA of ion current. At a 6 mA output, source lifetimes in excess of 40 hours have been achieved. The implanter uses a specifically designed high temperature disk, which holds ten wafers, each of four inch diameter. A variety of implant angles lying between 0° and 15° is available. The beam is scanned mechanically and an electron flood gun can be used to prevent wafer charging. Special thermal barriers have been employed to protect the apparatus from extreme temperatures and to make the heating sequence more efficient and more rapid. Every effort has been made to avoid contamination of the implant. The implant disk, for example, is overcoated with silicon monoxide. Silicon apertures have also been designed for the machine. The implanter has been used to do a high current oxygen implant with a dose of 1.25 × 10 18/cm 2, at a temperature of 570°C. Preliminary analysis of the results is very promising.