A high current implantation machine (PR-200) has been produced in order to apply economically the ion implantation technique to high energy and high dose doping of semiconductor. This machine can provide beams 10 mA of phosphorous, 7 mA of arsenic and 4.5 mA of boron at 200 keV. The rotating mechanical scan system is used to obtain good dose uniformity. Wafers are mounted on a metal disk, which rotates at 500 rpm and transverses the ion beam several times during the implantation. In this machine dose nonuniformity is less than 2%. The wafer disk is cooled by liquid freon to limit the temperature of the wafers during ion implantation. Measurements show that the wafer temperature is less than 120°C at 1000 W for 1 × 10 16 ions/cm 2. An automatic system of wafer handling is provided in this machine. Wafers are loaded from a cassette to the disk and are unloaded back into another cassette, so that cassette to cassette operation can be proceed. The target chamber may be loaded with one of two disks, which are located at the right and left side of the ion beam. Thus one disk can be loaded with wafers while the other is implanted. Wafer throughput is more than 95 wafers/h for 4 inch wafer at 1 × 10 16 ions/cm 2 for 8 mA ion beam.